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RV1C002UN RV1C002UN nch 20v 150ma small signal mosfet device ideal for partable equipment. 3) drive circuits can be simple. 4) built-in g-s protection diode. junction temperature t j 150 c range of storage temperature t stg - 55 to + 150 c power dissipation gate - source voltage v gss ? 8 v p d *3 100 mw continuous drain current i d *1 ? 150 ma pulsed drain current i d,pulse *2 ? 600 ma drain - source voltage v dss 20 v taping code t2cl marking ry l absolute maximum ratings (t a = 25c) parameter symbol value unit l packaging specifications type packaging taping l application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 8,000 l features l inner circuit 1) the world smallest package (0806size). 2) low voltage drive(1.2v) makes this l outline v dss 20v vml0806 r ds(on) (max.) 2.0 w i d 150ma p d 100mw c/w l thermal resistance parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *3 - - 1250 * 1 body diode * 2 esd protection diode (1) source (2) gate (3) drain (3) (1) (2) 1/10 2012.08 - rev.a dat asheet www.rohm.com ? 2012 rohm co., ltd. all rights reserved.
RV1C002UN *1 limited only by maximum temperature allowed. *2 pw ? 10 m s, duty cycle ? 1% *3 each therminal mounted on a recommended land *4 pulsed - ms transconductance g fs *4 v ds =10v, i d =150ma 110 - w v gs =1.5v, i d =20ma - 2.7 5.4 v gs =4.5v, i d =150ma, t j =125c v gs =1.2v, i d =10ma - 3.8 11.4 2.0 - 2.3 4.6 v gs =2.5v, i d =150ma - 2.6 v gs =1.8v, i d =150ma - 2.2 3.4 static drain - source on - state resistance r ds(on) *4 v gs =4.5v, i d =150ma - 1.4 1.7 v gate threshold voltage v gs (th) v ds = 10v, i d = 100 m a 0.3 - 1.0 m a gate - source leakage current i gss v gs = ? 8v, v ds = 0v - - ? 10 m a zero gate voltage drain current i dss v ds = 20v, v gs = 0v - - 1 v drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 20 - - l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. 2/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN ma ma v gs = 0v, i s = 150ma v l body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. pulsed source current i sm *2 continuous source current i s *1 - t a = 25c forward voltage v sd *4 - - 1.2 r g = 10 w - 25 - - - 600 - 80 - ns rise time t r *4 i d =75ma - 4 - turn - off delay time t d(off) *4 r l = 133 w - 12 - fall time t f *4 turn - on delay time t d(on) *4 v dd ? 10v, v gs = 4.5v - 3 reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v output capacitance c oss v ds = 10v - 5 unit min. typ. max. pf - - 12 - - 3 - l electrical characteristics (t a = 25c) parameter symbol conditions values 3/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l electrical characteristic curves fig.4 typical output characteristics(ii) 0 0.05 0.1 0.15 0 0.2 0.4 0.6 0.8 1 v gs =1.0v v gs =1.2v t a =25oc pulsed v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.5v 0 0.05 0.1 0.15 0 2 4 6 8 10 v gs =1.0v v gs =1.2v t a =25oc pulsed v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.5v 0 20 40 60 80 100 120 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 -25 0 25 50 75 100 125 150 fig.1 power dissipation derating curve fig.2 drain current derating curve power dissipation : p d /p d max. [%] drain current dissipation : i d /i d max. (%) fig.3 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] junction temperature : t j [ c] junction temperature : t j [ c] 4/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l electrical characteristic curves 20 25 30 35 40 45 50 -50 0 50 100 150 v gs = 0v i d = 1ma pulsed 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 v ds = 10v i d = 1ma pulsed 0.001 0.01 0.1 1 0 0.5 1 1.5 2 v ds = 10v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.01 0.1 1 10 0.01 0.1 1 v ds = 10v t a = - 25 oc t a =25oc t a =75oc t a =125oc fig.8 transconductance vs. drain current fig.5 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] junction temperature : t j [ c] fig.6 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] fig.7 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] drain current : i d [a] transconductance : g fs [s] 5/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l electrical characteristic curves 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 v gs = 10v i d = 150ma pulsed 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 t a =25oc i d = 150ma i d = 10ma 0 1 10 100 0.001 0.01 0.1 1 t a =25oc v gs = 1. 2 v v gs = 1.5v v gs = 1.8v v gs = 2.5v v gs = 4.5v 0.1 1 10 100 0.01 0.1 1 v gs = 4.5v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.9 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. drain current(i) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.11 static drain - source on - state resistance vs. j unction temperature static drain - source on - state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.12 static drain - source on - state resistance vs. drain current(ii) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 6/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l electrical characteristic curves 0.1 1 10 100 0.01 0.1 1 v gs = 2.5v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.1 1 10 100 0.01 0.1 1 v gs = 1.8v t a =125oc t a =75oc t a =25oc t a = - 25 oc 0.1 1 10 100 0.001 0.01 0.1 1 t a =125oc t a =75oc t a =25oc t a = - 25 oc v gs = 1.5v 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 1.2v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.13 static drain - source on - state resistance vs. drain current(iii) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.14 static drain - source on - state resistance vs. drain current(iv) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.15 static drain - source on - state resistance vs. drain current(v) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] fig.16 static drain - source on - state resistance vs. drain current(vi) static drain - source on - state resistance : r ds(on) [ w ] drain current : i d [a] 7/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l electrical characteristic curves 1 10 100 0.01 0.1 1 10 100 t a =25oc f=1mhz v gs =0v c oss c rss c iss 1 10 100 1000 0.01 0.1 1 t a =25oc v dd = 10v v gs = 4.5v r g =10 w t r t f t d(on) t d(off) 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 v gs =0v t a =125oc t a =75oc t a =25oc t a = - 25 oc fig.18 switching characteristics fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] switching time : t [ns] drain current : i d [a] fig.19 source current vs. source drain voltage source current : i s [a] source - drain voltage : v sd [v] 8/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms l notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 9/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet
RV1C002UN l dimensions (unit : mm) dimension in mm/inches patterm of terminal position areas vml0806 b3 l1 l1 b2 l2 b1 b e e1 l l d e a a1 10/10 2012.08 - rev.a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. data sheet min max min max a 0.33 0.39 0.013 0.015 a1 0.00 0.05 0.000 0.002 b 0.10 0.20 0.004 0.008 b1 0.45 0.55 0.018 0.022 d 0.55 0.65 0.022 0.026 e 0.75 0.85 0.030 0.033 e e1 l 0.15 0.25 0.006 0.010 min max min max b2 - 0.25 - 0.010 b3 - 0.70 - 0.028 l1 - 0.30 - 0.012 l2 - 0.90 - 0.035 dim milimeters inches 0.35 0.014 0.50 0.020 dim milimeters inches
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.

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